Samsung and Toshiba support standardized NAND spec for fast DDR memory

Samsung and Toshiba are both putting their weight behind a new standardized NAND specifications for high performance applications. The new NAND toggle DDR 2.0 specification will be for a DDR flash memory with a 400 Mbps interface. Toshiba announced earlier this month that it was starting a joint venture with SanDisk in a new NAND flash production facility.

The current toggle DDR 1.0 spec uses a DDR interface with a conventional single data rate NAND design. The chips using this specification have a 133Mbps interface. The new NAND using toggle 2.0 will offer 400Mbps interface for an improvement of three times over the DDR 1.0 spec.

The new NAND using the toggle 2.0 specifications will provide a ten times increase in performance compared to 40Mbps single data rate NAND still in use today. Support for the new spec will make for faster acceptance of toggle DDR memory with designers of hardware and applications according to both firms.