SanDisk and Toshiba made two announcements yesterday that promised to deliver cheaper and bigger MLC (multi-level cell) NAND flash media. First is their x3, aka three-bit-per cell technology, would allow the company to cram 20 percents more die per wafer than traditional 56nm MLC flash which uses two-bits-per-cell technology. Second is the use of 43 nanometer process technology that doubles the density per chip compared to the previous 56nm process.
SanDisk-Toshiba co-designed 43nm production process is ready to begin its mass-production and shipment will start in the second half of 2008 with 16GB and 32GB models. You can expect a more competitive flash based storage soon.