Appleton is attributed with building semiconductor company Micron into one of the world’s largest makers of DRAM memory chips. He has a long history with the company, starting out as a production worker and eventually working his way up. He became an advocate for fair trade against Japanese rivals, which dominated the memory chip market back in the 80s by selling chips below cost, a practice known as dumping.

“We are deeply saddened to announce that Steve Appleton, Micron Chairman and CEO, passed away this morning in a small plane accident in Boise. He was 51. Our hearts go out to his wife, Dalynn, his children and his family during this tragic time. Steve’s passion and energy left an indelible mark on Micron, the Idaho community and the technology industry at large,” read a statement issued by Micron’s board.

Appleton had survived a plane crash back in 2004, where he sustained head injuries, a punctured lung, ruptured disk, and broken bones. However, he had not revealed the severity of his crash until 2006.

[via VentureBeat]

It’s a buyers market right now if you’re looking into RAM upgrades. IHS iSupply uses a “DRAM Inventory Index” to measure the inventory value at the end of a quarter against the sales for the quarter. The index is used to determine the DRAM inventory held by memory suppliers by recording the number of weeks of inventory the market has. At the end of the third quarter of 2011 inventory stood at 12.8 weeks, a 31% increase from 9.8 weeks in the second quarter. This is also extremely higher than the quarterly average of 9.2 weeks. For buyers of RAM this means you can upgrade for cheaper since suppliers are suffering and are forced to lower prices.

Of course there are reasons for this horrendous oversupply. One culprit affecting the market is newer applications, such as tablets. Tablets use lower densities of DRAM and are stunting sales growth of traditional laptops. For those in the market to upgrade your desktop PC or laptop, however, this may come as good news.

[via Allthingsd]

Though this newer card has essentially the same thickness as the CF card, it is 38.5 x 29.8 x 3.8mm and takes on the shape of what appears to be a golden rectangle – quite nice to look at, yes? Much better than that nasty old fat rectangle we’ve been using, yuck! This card is based on PCI Express instead of SD’s PCMCIA standard, this offering up a base maximum transfer rate of 2.5Gbps – sweet speeds! The folks at the CompactFlash Association have targeted the speeds for this card at 125MB/s to start, but we can expect 250MB/s transfer rates in the future. CFA chairman Shigeto Kanda noted:

“The XQD format will enable further evolution of hardware and imaging applications, and widen the memory card options available to CompactFlash users such as professional photographers.” – Kanda

This XQD card will be shown off for the first time publicly in February at the CP+ trade show in Japan. At the moment there does not appear to be any launch partners and no cameras have signed on to carry the card as of yet. We’ll see how quick this format catches on next year!

[via Ars Technica]

It’s a noise-free computer, works at 10-26V of DC power, and some hot power under the hood with the Intel D525 Pineview 1.8GHz Dual Core processor. What’s this device made for? They say it’s made for embedded and in-vehicle applications as well as mobile applications. Plug in what you need, make it work for you.

You’ve got Gigabit LAN, 3-USB, 1-external express card slot, Audio In/Out, 2-PS/2 ports, 2-Serial, and Video. And there’s a rear-locking DC power connector. And an internal Mini-PCIe card slot that supports up to 4GB of DDR3 SODIMM memory. Also inside is a massive 55GB solid state drive (SSD) for vibration, shock, and extended operating temperatures including -10 to +45C or 14 to 113F.

You can configure this system with Microsoft Windows 7/XP, Linux, or whatever you want – Stealth will configure the computer to meed the needs of the OEM or end user, that being you, of course. Starting shipping price on the LPC-125LPFM is $895.00 USD and you can order it from Stealth.

To achieve what Samsung and Micron insist is a “complete paradigm shift” the companies have developed a brand new memory architecture, pairing high-speed logic process technology with a memory through-silicon-via (TSC) bonded memory die stack. That will allow memory to keep pace with the Moore’s Law progress of CPUs and GPUs, which are increasingly using multicore technologies that demand more memory per compute element.

“HMC blends the best of logic and DRAM processes into a heterogeneous package.  At the foundation of HMC is a small logic layer which sits below vertical stacks of DRAM die connected by through-silicon via (TSV) bonds.  An energy optimized DRAM array provides efficient access to memory bits via the logic layer, providing an intelligent memory device truly optimized for performance and energy efficiencies” HMCC

Rather than being overwhelmed with the current crop of multicore processors, falling short on memory bandwidth and density, HMC will apparently be able to keep up with even exascale computing expected in the future. At its heart is the 3D construction of the various silicon layers, with the logic layer as the base and then dense layers of memory stacked on top.

The HMCC expects to have an industry-adoptable specification for HMC sometime in 2012, and Samsung and Micron are looking for other memory players to throw in with them.

[via GigaOm]

More volume often leads to reduced prices but if Samsung can grab more of the market, it can offset the lower sales prices in volume. Samsung already counts Apple among its largest buyers of memory. Line-16 will be making the first mass production runs of DDR3 DRAM based on 20nm class process technology. That process technology allows for better productivity on the construction line and makes for less energy consumption in use inside computers and servers.

Line-16 is located in the Nano City Complex in Hwaseong, Gyeonggi Province that Samsung operates. Construction on Line-16 kicked off in May of 2010 and the installing of the equipment for clean rooms was finished this May. Trail production kicked off in June and the facility was ready for mass production in August. The facility is inside a 12-story building and has 198,000 square meters of space, and is projected to produce 10,000 12-inch wafers monthly.

Interestingly, we aren’t that far removed from the time when memory sold for less than it cost to make. On the surface launching a new plant to make even more seems like a bad idea, especially when construction started when the economy in the US, one of the largest tech consumers in the world, was very bad. Apple was also one of the only tech firms that was able to grow during the economic turmoil. It’s worth noting that the Samsung plant is ready for mass production at roughly the same time that the iPhone 5 and iPhone 4S are coming.

Apple is one of the biggest buyers of Samsung for memory products. Perhaps this is the way that Apple will drive the cost of hardware inside the iPhone 5 and 4S, by having a massive production capacity at its disposal and at the same time allowing Samsung the capacity to support its other customers. Memory is the typically around the third most expensive part inside a smartphone behind the screen and chipset so things make a little sense when you consider just how many of the iPhone 4S and iPhone 5 smartphones Apple will sell along with iPads and other gear. What do you think, could a massive sales goal for new Apple iPhones be the driving force behind this Samsung expansion?

Kingston posted global revenue of $6.5 billion in 2010, which is as $2.4 billion increase from 2009. Kingston attributes that massive growth in 2010 to an increase in the average selling price and an increase in shipment volume. Kingston is one of the largest makers of all sorts of memory products from flash storage of RAM from computers like the new HyperX T1 kit it introduced this month.

Kingston said that the rise in average sales price started in Q1 2010 and continues throughout the year. A lot of the increased profit was thanks to enterprise customers with growth in the Kingston OEM and Flash business divisions.

The new chip-stacking tech is called “through silicon via” or TSV. The big benefit of the new green memory is that the 3D TSV tech allows the memory to save up to 40% of the power consumed by conventional RDIMM. The new RAM is expected to allow for a dramatic improvement in memory chip density.

The DRAM will let the end user raise the memory density in server systems by 50% and improve performance at the same time. Samsung expects the 3D TSV tech to be adapted widely in 2012 and will apply the technology to memory for other markets as well.

Micron has unveiled a new NOR flash memory product for automotive applications that brings new 65nm NOR flash device to market. The NOR flash is 512Mb and is sampling right now with mass production set to commence in 2011.

The memory is built using a 65nm process and has a parallel interface that is compliant with automotive industry standards and meets all the flash memory requirements for components suitable for use in automobiles. More memory that is faster will make it easier for car builders to give us more interactive applications and features inside the car that need lots of fast memory to operate.

That heat shield is a custom design that has copper inserts that cross all the DRAM chips and still offer up a slim profile that is covered by an anodized aluminum shield. The design of the heat sink offers a 5% improvement in heat dissipation over pure aluminum heat sinks. That 5% can make a difference to the hard core overclocker or gamer looking for all the performance that they can muster.

The new RAM kits launch today and will be offered in dual-channel 4GB and 8GB kits operating at 2000MHz. The kits are aimed at users of Intel P55 platforms. Patriot says that more kits will be incoming including triple-channel kits for the X58 platform. Both the 4GB and 8GB kits have the same latencies of 9-10-9-27.

Samsung is working with the JEDEC Solid State Technology Association to create this new Universal Flash Storage memory format, and the two companies believe they can make it possible for data transfer speeds reaching as high as 300Mbps, while offering future scalability. It looks like memory, and how we use it, is starting to be the focus of companies all over the globe, as this announcement pairs quite nicely with the recent announcement from Toshiba, regarding their Ultra High-Speed I (UHS-I), which doesn’t offer up the same speed as Samsung is boasting, but is a change for the better nonetheless.

Samsung says that the new platform is designed to work in the same things we find flash cards in now, but the universal standard is meant to make it easier for consumers not to get confused by the multiple platforms and manufacturers. It’s also meant to make it possible for more interoperability between products, no matter which vendors are supplying them. It’s also said that Sony Ericsson, Texas Instruments, and Nokia are joining in this effort for a faster, universal standard.

[via DigiTimes]

Samsung is shipping configurations of 8GB reached with 1G x 64 configuration. The first machine on the market to use the new RAM chips is the 17-inch Dell Precision M6500 mobile workstation. The workstation has 32GB of the Samsung RAM with four 8GB SoDIMMs.

Samsung says that the new RAM is also greener than using older RAM in the workstations as well. The 8GB DDR3 memory needs 53% less power than a pair of 4GB DDR3 modules. The need for less power in a notebook generally equates to less heat produced and longer battery life.

The RAM hit frequencies of 3078.2 MHz with timings of CL8-11-8-31, 1T and 3059.4 MHz at CL7-11-8-31, 1T. The geek who overclocked the nuts off the RAM to break the records is named Matthias Zronek. The world records were validated using the CPU-Z validation database.

The hardware in the test computer used for the record setting runs was a Gigabit P55-A-UD7 motherboard, an Intel Core i7-870 CPU, and two Dominator GT CMGTX6 RAM modules. Corsair notes that the modular design of the RAM allowed Zronek to attach a Besi Memory-Freezer directly to the RAM heat sinks enabling benchmark temperatures as low as -90C using liquid nitrogen.

The HyperDrive does a few work-arounds to make it so that the iPad can register the external memory unit. The problem comes in the fact that the iPad’s Camera Connection Kit has a limit of only 32GB available memory, so the HyperDrive gets around that by creating separate, iPad-readable 32GB drives, which allows you to store up to 750GB of stuff with (relative) ease. The HyperDrive features a 3.2-inch color touchscreen, so navigation should be pretty simple, too.

The HyperDrive can read up to 12 types of memory cards, so you should be okay if you feel like you have some off brand, or something similar. And, if you need a memory card back-up device, the HyperDrive will help you there, too. And, while 750GB may be too big for some, you’ll be happy to know that the full range starts at 120GB (for $299), all the way up to 750GB (for $599). So, if you’re wondering if you can use the iPad instead of your laptop, well, here’s one step closer to getting your answer.

[via Ubergizmo]

The Samsung Orion obviously supports Full HD 1080p – both encode and decode – with an HDMI 1.3a output that can be concurrently run while the Cortex A9 chip simultaneously drives two onboard displays.  There’s also an embedded GPS receiver, and Samsung will be offering two versions of Orion: one stacked with memory and another, smaller, with just the chip itself.  Sampling will take place in Q4 2010, with mass production in the first half of next year.

As for the NAND flash, Samsung expect to begin producing 16GB moviNAND using 20nm-class 32Gb NAND flash later in September, and then will begin replacing its existing 30nm-class 32Gb chips with 20nm-class chips later in the year.

Finally, both CMOS chips – the S5K4E5 and S5K2N1 - support 30fps video capture, and Samsung reckons the back-illuminated design takes in 30-percent more light than regular chips.  The S5K4E5 will be headed to smartphones and other portable devices, while the S5K2N1 is targeted more at digital video cameras; mass production will start in Q4 2010 and Q1 2011 respectively.

Press Release:

Samsung Introduces High Performance, Low Power Dual CORTEXTM – A9 Application Processor for Mobile Devices

TAIPEI, Taiwan–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., a world leader in advanced semiconductor solutions, today introduced its new 1GHz ARM® CORTEXTM A9-based dual-core application processor, codenamed Orion, for advanced mobile applications. Device OEM developers now have a powerful dual processor chip platform designed specifically to meet the needs of high-performance, low-power mobile applications including tablets, netbooks and smartphones. Samsung’s new processor will be demonstrated at the seventh annual Samsung Mobile Solutions Forum held here in Taiwan at the Westin Taipei Hotel.

“Consumers are demanding the full web experience without compromise while on the go,” said Dojun Rhee, vice president of Marketing, System LSI Division, Samsung Electronics. “Given this trend, mobile device designers need an application processor platform that delivers superb multimedia performance, fast CPU processing speed, and abundant memory bandwidth. Samsung’s newest dual core application processor chip is designed specifically to fulfill such stringent performance requirements while maintaining long battery life.”

Designed using Samsung’s 45 nanometer low-power process technology, Orion features a pair of 1GHz ARM Cortex A9 cores, each comes with a 32KB data cache and a 32KB instruction cache. Samsung also included a 1MB L2 cache to optimize CPU processing performance and provide fast context switching in a multi-tasking environment. In addition, the memory interface and bus architecture of Orion supports data intensive multimedia applications including full HD video playback and high speed 3D action games.

Samsung’s new application processor incorporates a rich portfolio of advanced multimedia features implemented by hardware accelerators, such as video encoder/decoder that supports 30fps video playback and recording at 1080P full HD resolution. Using an enhanced graphics processing unit (GPU), the new processors are capable of delivering 5 times the 3D graphics performance over the previous processor generation from Samsung.

For design flexibility and system BOM cost reduction, Orion integrates a set of interfaces commonly used in mobile devices to configure various peripheral functionalities. For example, with this processor, customers have the choice to use different types of storage including NAND flash, moviNANDTM, SSD or HDD providing both SATA, and eMMC interfaces. Customers can also choose their appropriate memory options including low power LPDDR2 or DDR3, which is commonly used for high performance. In addition, a global positioning system (GPS) receiver baseband processor is embedded in the processor to seamlessly support location based services (LBS), which is critical in many emerging mobile applications.

Orion features an onboard native triple display controller architecture that compliments multi-tasking operations in a multiple display environment. A mobile device using the Orion processor can simultaneously support two on-device display screens, while driving a third external display such as a TV or a monitor, via an on-chip HDMI 1.3a interface.

Orion is designed to support package-on-package (POP) with memory stacking to reduce the footprint. A derivative of Orion, which is housed in a standalone package with a 0.8mm ball pitch, is also available.

Samsung’s new dual-core application processor, Orion, will be available to select customers in the fourth quarter of 2010 and is scheduled for mass production in the first half of 2011.

Press Release:

Samsung Introduces Higher-performance Embedded NAND Flash for Smartphones

TAIPEI, Taiwan–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today introduced high-performance 8-gigabyte (GB) and 16GB moviNAND™ embedded memory chips for use in smartphones at the seventh annual Samsung Mobile Solutions Forum held here at the Westin Taipei Hotel. The new solutions are the first memory devices in the industry fully compatible with the latest e-MMC specification, the JEDEC’s Embedded MultiMediaCard Product Standard v4.41.

“These solutions are consistent with our commitment to provide a diversity of technologies for embedded memory to enhance its user-friendliness, in contributing to the rapid growth of the smartphone market.”
Adopting the new higher performance e-MMC 4.41 specification, Samsung’s moviNAND can operate more efficiently than previous solutions developed under the e-MMC 4.4 specification by providing features that improve the responsiveness of the e-MMC device to the host (or application processor).

“We have already been providing new moviNAND solutions compatible with e-MMC v4.41 to a few key customers and getting a very positive response from them,” said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. “These solutions are consistent with our commitment to provide a diversity of technologies for embedded memory to enhance its user-friendliness, in contributing to the rapid growth of the smartphone market.”

Previously the e-MMC 4.4 interface has offered designers the flexibility of partitioning storage, such as using the single-level cell (SLC) area for high speed operations and the multi-level cell (MLC) area for high density data storage. Now, the new chips (adhering to the new e-MMC 4.41 interface standard) provide a significantly upgraded user experience, with a high priority interrupt (HPI) and improved background operation features.

Embracing the new standardized features, the latest Samsung moviNAND chips enable more efficient processing of orders. If the host wants to execute an application or read data while the e-MMC device is writing data, the host can send an HPI command to the device so that the device stops previous writing to respond to the newest command. Using this feature, the host can receive the device’s response without any latency.

Also, when the Samsung embedded memory is not in operation, the host can command it to utilize the free time for background operations such as garbage compaction, so that the embedded memory can reduce the write latency.

In addition to its new high-performance moviNAND, Samsung is introducing ultra-thin five chip MCP (multi-chip package) solutions which measure just 1 millimeter (mm), a significant reduction over current four-chip MCPs that are 1.15mm in height (z-height). The moviNAND-based MCP will be available in combination with mobile DRAM. The advanced multipurpose MCP offerings will be available by the end of this year for use in mobile applications with high multimedia workload such as smartphones.

Samsung already started producing 8GB moviNAND, using 30 nanometer (nm) class 32-gigabit (Gb) NAND flash chips in late July, and will start producing 16GB moviNAND using 20nm-class 32Gb NAND flash this month.

Samsung plans to start replacing its 30nm-class 32Gb NAND flash chips with a full line of 20nm-class 32Gb NAND chips for future moviNAND products later this year.

Press Release:

Samsung Demonstrates New CMOS Imagers with Back Side Illumination Technology for Mobile Devices

TAIPEI, Taiwan–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., a world leader in advanced semiconductor solutions, today announced two new 1.4 micron CMOS imagers, the S5K4E5 and S5K2N1, adopting back side illuminated (BSI) pixel technology. With excellent performance capabilities in low light scenarios, each imager is optimized for target applications such as smartphones for the S5K4E5 and digital still cameras (DSC) and digital video cameras (DVC) for the S5K2N1. Samsung’s newest CMOS imagers will be demonstrated today at the seventh annual Samsung Mobile Solutions Forum held here in Taiwan at the Westin Taipei Hotel.

“The demand for higher quality images and video with ever shrinking pixel size has pushed the new technology innovation curve in CMOS imagers,” said Dojun Rhee, vice president of Marketing, System LSI Division, Samsung Electronics. “As such, CMOS image technology has become even more competitive in digital camera and video products that have been traditionally dominated by CCD technology. A small pixel size combined with best-in-class sensitivity under low light for still and video capture makes Samsung’s newest imagers ideal for traditional handheld cameras as well as smartphones.”

In contrast to the front side illumination technology, backside illumination collects photons from the backside of the pixel. The reversed structure moves the photodiode to the top maximizing photoelectric efficiency as the light is not scattered through the metal wiring and dielectric layers, which cause the loss of photons. Adoption of the BSI technology addresses the low light sensitivity concern common to CMOS image sensors as the pixel size reduces.

Samsung’s new BSI imagers show 30 percent enhancement in low light sensitivity over conventional front side illumination imagers of the same pixel size. By optimizing process parameters, Samsung was able to efficiently control crosstalk thereby improving the color, electrical and optical performance significantly.

The S5K4E5, a quarter-inch optical format 1.4 micron 5 megapixel (Mp) CMOS image sensor, is designed to support full resolution real-time video. By providing 30 frames per second (fps) full resolution frame rates it also enables the user to ‘catch the shot’ by capturing the frame as the user hits the shutter button thus reducing shot to shot lag time. The 5Mp imager has a wider chief ray angle that reduces the height of the imager package making it attractive for slim, small form factor smartphones with demanding z-height requirements.

The S5K2N1, a 1/2.33 inch optical format 1.4 micron 14.6Mp imager, offers 30fps capability at full resolution and leverages Samsung’s low-power 90 nanometer logic process technology. Samsung is able to offer a dedicated thermal enhanced plastic lead ceramic carrier (TePLCC) package to more effectively dissipate the heat generated by the high performance device.

These imagers also offer the ability to capture full high definition (HD) resolution video images at 60fps.

Samples of the 5Mp S5K4E5 are available now with mass production starting in the fourth quarter of this year. The 14.6Mp S5K2N1 is expected to start sampling in the fourth quarter of 2010 with production scheduled in the first quarter of 2011.

But, just because something gets smaller, doesn’t mean it’s all that great. If you lose the size, but also start losing features, then there’s no real point in making it at all, is there? Thankfully, SanDisk’s new SSD didn’t fall into this trap. The new chip can be connected together through the traditional SATA interface, which means you can chain these little guys together to make even bigger drives.

As for read and write times? They’ve got the new chip clocked at 160MB/sec for sequential read, and 100MB/sec for sequential write times. That’s better than pretty good, especially considering the tininess involved here. And, we’ll just assume that it’s only going to get better. Only unfortunate part is that this isn’t ready to hit mainstream devices quite yet, but hopefully sooner than later.

Press Release

Flash Memory Summit, Santa Clara, Calif., August 18, 2010-SanDisk Corporation (NASDAQ: SNDK), the global leader in flash memory cards, today announced the first product in a new category of embedded solid state drives (SSD) that are smaller than a postage stamp and offer higher capacities and performance than existing storage solutions. The SanDisk® integrated SSD (iSSD), the first high-capacity product within this new category, is designed for use in fast-growing mobile computing platforms such as tablet PCs and ultra-thin notebooks.

Computing platforms are responding to consumer demand for highly portable, ultra-thin, anywhere-anytime access to the Internet and their favorite content. The SanDisk iSSD drive is the first flash SSD device to support the industry standard SATA interface in a small BGA (Ball Grid Array) package that can be soldered onto any motherboard, and that is fast enough for use with advanced operating systems in next-generation mobile computing platforms.

“The new category of embedded SSDs should enable OEMs to produce tablets and notebooks with an unprecedented combination of thin, lightweight form factors and fast performance,” said Doron Myersdorf, senior director, SSD marketing, SanDisk.

“With our embedded flash storage leadership, SanDisk believes it is uniquely positioned to deliver the ultra compact SSD solutions needed by OEMs.”

“The ultra-thin tablet and mobile computer markets are expected to experience tremendous growth over the coming years, and new advanced platforms will introduce new requirements for storage solutions,” said Jeff Janukowicz, research manager, solid state drives, IDC. “New embedded SSDs such as the SanDisk iSSD drive, which meet the stringent size requirements of small and light devices while offering greater performance, are designed to enable OEMs to deliver an enhanced user experience in their next-generation designs.”

The SanDisk iSSD offers 160MB/sec sequential read and 100MB/sec sequential write speeds for greater system responsiveness*. With no moving parts, the tiny, robust drive is designed to deliver the durability needed by portable devices that are frequently dropped or jostled. SanDisk iSSD offers a substantial level of design flexibility for OEMs who seek to create the next generation of tablets and ultra thin mobile devices based on the standard SATA interface.

The SanDisk iSSD is available now for sampling to OEMs, and is being evaluated by top-tier manufacturers. Measuring 16mm x 20mm x 1.85mm and weighing less than one gram, the drive uses a BGA form factor and a SATA interface, and is compatible with all leading operating systems. SanDisk iSSD is available in capacities ranging from 4 gigabytes (GB)1 to 64GB, with pricing dependent upon the quantity ordered.

It’s not just one option, either. No, instead they’ve hit the market with three different variations, all at different price points. Basically, making sure everyone has what they’re looking for. According to a Kingston spokesperson, the reason they chose water-cooled options, was due to the reliability and quiet operation. Which makes sense, especially for their choice of dual- and triple-channel kits.

The three options are going to be set within Kingston’s new H20 line-up of memory kits. The two “base versions” will be the 4GB dual-channel kits, clocked at 2000MHz and 2133MHz, respectively. And then there is the 6GB triple-channel option, which is clocked at 2000MHz. The three options will cost you $157.00, $205.00, and $235.00. So if you’re a PC gamer, and you like to build yourself some high-profile, expensive, and impressive rigs, it looks like Kingston has a brand new way for you to make your system one of the best out there.

[via TG Daily]

Mac specialty shop OWC has announced memory upgrades specifically for the new iMac computers. Buyers can get 2GB of PC10600 1333MHz SO-DIMM RAM for $59.99. If that isn’t enough RAM for you a 4GB kit of the same stuff with a pair of 2GB modules will set you back $117.99.

If you want that 4GB of RAM in a single module, you can get it for $144.99. OWC also has kits with 8GB via a pair of those 4GB modules for $279.99 and a 16GB kit with four of the 4GB modules for $549.99.

Capacity wise, the Cruzer Blade comes in a range of 2GB to 16GB, and obviously the prices reflect what you’re getting. Starting at the bottom of the spectrum, you’ll be paying $14.99, all the way to the top of the list, where you’ll be smacking down $77.99. And just because it’s small, doesn’t mean that it can’t transfer your data in a reasonable amount of time, as SanDisk says it can handle it just fine. It comes with a two year warranty, and it’s available right now.

[via GearLog]

The company is now offering 4GB memory modules for users who need lots of RAM with only a few available memory slots. The new high capacity RAM modules operate at up to 2133MHz making them fast and offering good performance.

The new modules are being offered in several product lines including the Flex EX, Reaper HPC, and Platinum series. The Platinum series is an entry-level line with the other two series being aimed at overclockers and high-end PC users. The kits will be offered in 8GB dual channel or 12GB triple-channel kits at up to 2133MHz.

Patriot claims that 64GB of storage space is enough for 21,000 6MP photos or ten hours of HD video. This would be a great storage card for those with HD camcorders that can record directly to SDXC cards.

The UHS-I certification means that the card provides at least 10MB/s sustained write speeds. The card is surprisingly cheap considering the amount of storage space it offers at $349.99.

ISuppli has found that Kingston was the top memory maker in 2009. According to iSuppli, the company had 40.3% of the memory market for DRAM modules last year. According to iSuppli, Kingston raked in $2.85 billion on memory alone.

The second place company in memory was A-Data with 7.4% of the market. The top five included Ramaxel, Smart Modular, and Crucial. Enthusiast favorite Corsair was number eight on the top ten list with 3.5% of the market.

The new modules measure a scant 17 x 22 x 1.4 mm and squeeze in sixteen 64Gbit4 (equal to 8GB) NAND chips produced on Toshiba’s own 32nm production line.  They also manage to pack in the controller circuit too, making for a smaller overall gadget, reduced data errors and a cheaper bill of materials.

Toshiba are estimating up to 55MB per second read speeds and up to 21MB per second write speeds from the memory, which will also be available in smaller capacities than 128GB.  Mass production is expected to begin in Q4 2010, perhaps perfectly timed for the iPad 2G refresh in early 2011.

Press Release:

TOSHIBA LAUNCHES INDUSTRY’S LARGEST EMBEDDED NAND FLASH MEMORY MODULES

eMMC™ Compliant Embedded Memories Combine up to 128GB NAND and a Controller in a Single Package

Download Larger Image (JPG 1,284KB) IRVINE, Calif., June 16, 2010— Toshiba America Electronic Components, Inc ., and its parent company Toshiba Corporation (TOKYO: 6502) today announced the launch of a 128-gigabyte (GB)1 embedded NAND flash memory module, the highest capacity yet achieved in the industry2. The module is fully compliant with the latest e-MMC™3 standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Samples will be available in September, and mass production will start in the fourth quarter (October to December) of 2010.

The new 128GB embedded device integrates sixteen 64Gbit4 (equal to 8GB) NAND chips fabricated with Toshiba’s cutting-edge 32nm process technology and a dedicated controller into a small package 17 x 22 x 1.4mm5. Toshiba is the first company to succeed in combining sixteen 64Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick.

Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities from 2GB to 128GB. They integrate a controller to manage basic control functions for NAND applications, and are compatible with the JEDEC e-MMC™ Version 4.4 and its new features. New samples of 64GB chips will also be available from August.

Demand continues to grow for large density chips that support high-resolution video and deliver enhanced storage, particularly in the area of embedded memories with a controller function that minimize development requirements and ease integration into system designs. Toshiba has established itself as an innovator in this key area, and is now reinforcing its leadership by being first to announce a 128GB generation module.

Key Features:
The JEDEC e-MMC™ V4.4 compliant interface handles essential functions, including writing block management, error correction and driver software. It simplifies system development, allowing manufacturers to minimize development costs and speed time to market for new and upgraded products.
The 128GB device stacks sixteen 64Gbit chips fabricated with leading-edge 32nm process technology. Application of advanced chip thinning, layering and wire bonding technologies has allowed Toshiba to achieve individual chips only 30 micrometers thick, and to layer and bond them in a small package. The result is an embedded flash memory module with the industry’s highest density.
The new products are sealed in a small FBGA package only 17 x 22 x 1.4mm and has a signal layout compliant with the JEDEC eMMC™ V4.4.

Specifications e-MMC™
Interface JEDEC e-MMC™ V4.4 standard HS-MMC interface
Power Supply Voltage 2.7V to 3.6V (memory core);
1.65V to 1.95V / 2.7V to 3.6V (interface)
Bus width x1, x4, x8
Write Speed*
21MB per sec.6 (Sequential/Interleave Mode)
21MB per sec.6 (Sequential/No Interleave Mode)*
Read Speed*
46MB per sec. (Sequential Mode/Interleave Mode)
55MB per sec. (Sequential/No Interleave Mode)*
Temperature range -25degrees to +85degees Celsius
Package 153Ball FBGA (+84 support balls)
* Target figures

The new modules have 32GB of memory on a single RDIMM module. The new high-density modules are designed for use in server environments. The modules use Samsungs new 40nm, 4Gb DDR 3 chips and represents a two times increase in capacity compared to the 16GB 2Gb modules introduced last March.

Using the new RDIMM modules, a dual CPU server can now have up to 384GB of RAM. Samsung also reports that replacing 12 DRAM modules of 16GB capacity with six 32GB modules would cut power use in the server by 40% while increasing DRAM operating speed by 33%. Mass production of the 32GB RDIMM is set to start next month.

Video demo after the cut

The company reckon it’ll be useful for digital photographers looking to more easily access their digital media – though who don’t want an Eye-Fi card – as well as iPhone owners looking to add extra capacity.  AirStash use HTML5 for their browser-based interface, and you can access documents as well as media files on more than one gadget at a time.

Recharging is done while the AirStash is plugged into a USB port, and the WiFi b/g connection can either be left unlocked or secured with WPA2 encryption.  A full charge is good for five hours use; the AirStash is available to order now, priced at $99.99.

[via jkOnTheRun]

The RAM runs at 1.25V at 1600MHz and is the lowest voltage RAM for PCs available today. Kingston has the new memory in its HyperX DDR3 range in a LoVo line. The line will include three different models of memory.

A mainstream low voltage kit will run at 1600MHz, a 1.35V kit will be offered, and a 1333MHz 1.25V kit will be available. All three kits are tested to work on the Asus P7P55D EVO mainboard. A 4GB kit capable of 1866MHz at 1.35V or 1600MHz at 1.25V will sell for $203. A 4GB 1.35V kit will sell for $158, and a 4GB 1333MHz kit at 1.25V will sell for $154.

The RAM kit is called the Viper II Sector 5 series and operates at 2250MHz. The DDR3 RAM has timings of 9-9-9-27 and is hand tested to work on the Intel P55 chipset platform. Patriot is offering the Sector 5 RAM in a 4GB kit consisting of a pair of 2GB modules with part number PVV34G2250LLK.

Patriot uses special edition aircraft-grad aluminum Sector 5 heat spreaders to remove heat created when overclocking. Each of the RAM modules is hand tested to operate at the advertised frequency and Patriot claims there is overhead for overclockers to get more performance. Patriot claims to have hit speeds of over 2400MHz with the modules.

Despite consisting of a stack of sixteen 32Gb NAND chips and a controller, the 64GB moviNAND embedded module is only 1.4mm high.  It opens up the possibility of capacious PMPs and smartphones offering speedy solid-state memory the amounts of which you’d previously have had to turn to compact HDDs to achieve.

As for the 32GB microSD card, while that may only have half the storage of the moviNAND module it will at least be of more use to existing devices.  It’s expected to go into mass production next month, while the moviNAND module has been in production since December 2009.

Press Release:

Samsung Announces 30nm-class, High-density NAND Flash for Mobile Devices

SEOUL, Korea — January 13, 2009 — Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced two high-density memory solutions for mobile devices. The new storage solutions – a 64-gigabyte (GB) moviNANDTM memory device and a 32GB micro secure digital (microSD) memory card – satisfy mobile handset designers’ requirements for advanced compact high-density memory.

“Samsung’s high-density memory solutions bring the storage capacity levels of computing systems to small, mobile devices,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics.

He added, “The 64GB embedded memory, moviNAND, and the 32GB microSD card each greatly expand the data storage density of mobile devices, meeting customers’ memory requirements and ushering in a new era of mobile and IT device capacity growth.”

The memory solutions are based on Samsung’s advanced 32 gigabit (Gb) NAND flash. The 64GB moviNAND, which measures 1.4mm in height, consists of 16 30nm-class 32Gb MLC NAND chips and a controller. The 17-die stack was achieved by using 30-micron thick chips and advanced package technology. With the new 64GB solution, Samsung’s proprietary embedded memory, moviNAND, is now available in 64GB, 32GB, 16GB, 8GB and 4GB densities.

The 32GB microSD card, developed this month, stacks eight 32Gb NAND components and a card controller. The industry’s highest capacity, production-ready microSD card is enabled by the use of Samsung’s advanced 30-nm class 32Gb NAND flash memory technology. Previously, the highest density microSD card in production had a 16GB capacity and was based on 40nm-class 16Gb NAND. The new 32GB card is 1mm-thick. The portion of the card that is inserted into a handset measures just 0.7 mm in height.

According to market research firm iSuppli, the global NAND flash memory market for 32GB and higher memory cards is forecast to be 530 million units in 2010 and reach 9.5 billion units by 2013 (in 16Gb equivalent units).

Samsung’s new 64GB moviNAND has been in mass production from December 2009, while the 32GB microSD is now being sampled with OEMs, with mass production expected next month.

As ever, there’s no real indication of how Lexar’s cards are differentiated from the rest of the gaming memory out there, nor from standard, non-gaming-targeted memory.  Lexar say it’s all about performance and reliability, but we’d argue regular cards generally offer that too.  Still, if you’re swayed by packaging then head on over to the company’s online store; prices start from $25 for an SDHC or $38 for a Memory Stick Micro M2.

Press Release:

Lexar Media Expands Gaming Line with Memory Stick Micro (M2) and Secure Digital High Capacity (SDHC) Memory Cards

Solutions Enhance Game-Playing Experience, Allow Users to Save Valuable Data and Multimedia Content on Leading Gaming Consoles

Lexar Gaming Line Key Messages:

• Provides users with high-capacity storage for gaming-related content on Sony® and Nintendo® gaming consoles
• Gives gamers a reliable way to store music, movies, photos, videos, and Internet favorites on their video game platforms
• Delivers reliable performance to ensure valuable gaming data is safely downloaded and saved on popular memory card formats
• Offered in a wide range of form factors for multiple gaming consoles

Fremont, CA, November 19, 2009 — Lexar Media, a leading global provider of memory products for digital media, today announced the expansion of its line of gaming solutions with the Lexar® Gaming Memory Stick Micro™ (M2™) and Gaming Secure Digital High Capacity (SDHC™) memory cards. Designed to take the gaming experience to the next level, the cards enable users to reliably save and store gaming data and multimedia content on popular gaming consoles. With the introduction of the new Gaming memory cards, Lexar is expanding its leadership in high-performance digital media gaming solutions to improve the overall video game experience for the growing number of consumers playing and competing on popular gaming consoles.

Available in 4GB and 8GB capacities, the Lexar Gaming M2 and Lexar Gaming SDHC memory cards give gamers the ability to store critical gaming data and information, such as cheat codes, checkpoints, custom settings, high scores, bonus materials, and player profiles. The new Gaming memory cards also enable gamers to store and manage games and downloaded multimedia content.

“Gamers live by their saved gaming data, and everyone from casual to hard-core gamers rely on that information to be available every time they power up their consoles,” said Manisha Sharma, director of worldwide memory card product marketing, Lexar Media. “Since most gamers play more than one title at a time and use their consoles for Web browsing and photo, video, and music storage, they need memory products that can hold lots of content. The Lexar Gaming M2 and SDHC cards give even the most passionate gamers a way to reliably store their video game information, and help enhance the overall playing experience.”

The new Lexar Gaming M2 card is compatible with Sony PSP®go and other Sony M2 devices. Lexar also offers the Lexar Gaming Memory Stick PRO Duo™ card for Sony PlayStation® Portable (PSP®) and PlayStation 3. The new Lexar Gaming SDHC card is designed for use with Nintendo® Wii™ and Nintendo DSi™, and also gives Nintendo DSi users the ability to snap and store photos with the device’s two built-in cameras, play back songs and music on their gaming device, and store games downloaded from the Nintendo DSi Shop.* Capacities of the Lexar gaming solutions include:

Lexar Gaming Memory Stick Micro (M2) card: 4GB and 8GB
Lexar Gaming Memory Stick PRO Duo card: 2GB, 4GB, and 8GB
Lexar Gaming SDHC card: 4GB and 8GB
Lexar Gaming SD™ card: 2GB

The Lexar Gaming line of memory cards provides consumers with the reliability they have come to expect from Lexar, backed by Micron’s industry-leading technology. All Lexar products are tested in the Lexar Reliability Lab to ensure quality, performance, and compatibility. Lexar is proud to provide customers with a higher level of confidence in their gaming memory, whether they are storing important gaming data on their handheld gaming device, or downloading and saving gaming content on their consoles. All Lexar Gaming line products include a five-year limited warranty.

Memory cards from the Lexar Gaming line can be found at mass market retailers, including Target. For additional information about the Lexar gaming line, visit www.lexar.com.

*Wii Menu 4.0 required

Rambus claims that testing so far with initial silicon has shown a performance improvement in data throughput of up to 50% while reducing power consumption by 20% compared to normal memory modules. The prototype device is an effort by the two firms to address the need for throughput-intensive computing in computers.

The threaded module tech in the prototype device uses industry standard DDR3 devices and a conventional module infrastructure. The improvement in power efficiency is achieved by partitioning the modules into separate independent channels that share common command/address port. Rambus will show the prototype off at IDF later this month.

“I don’t know much about speed tests and all that technical mumbo jumbo–that’s best suited for labs in Silicon Valley and press releases, but what I do know is that I never waited on these cards, and I shot 25-frame RAW file sequences all day without running out of storage” Chase Jarvis

Thanks to the UDMA-6 bus the new Extreme Pro cards are twice as fast as SanDisk’s previous range, and there’s also new wear-leveling technology to prolong lifespan.  Meanwhile they’re each rated for use in temperatures ranging from minus 25 centigrade to plus 85 centigrade, and have an RTV silicone coating for moisture and humidity protection.

Finally they’re drop-proof from up to 9ft, and have a lifetime warranty.  They’re set to hit the market in October 2009, with UK prices of £197 to £657 for the 16GB to 64GB versions, and US prices of $304, $518 and $812 for the 16GB, 32GB and 64GB models respectively.

Press Release:

SANDISK EXTREME PRO COMPACTFLASH CARD RAISES BAR FOR PROFESSIONAL GRADE PERFORMANCE, CAPACITY AND RELIABILITY

World’s Fastest High-Capacity Memory Card Features SanDisk
Power Core Controller That Optimises Card Endurance and
Boosts Read/Write Speed to up to 90MB/s

SanDisk Corporation (NASDAQ: SNDK), the global leader in flash memory cards, today introduced a new line of SanDisk Extreme® Pro™ CompactFlash® memory cards, setting a new standard for fast, reliable, high-capacity memory cards designed for professional photographers. SanDisk Extreme Pro CompactFlash cards feature a new SanDisk® Power Core Controller™, an advanced memory controller that enables lightning-fast read and write speeds of up to 90MB/s1, doubling the performance from previous SanDisk high-end cards. The cards are shipping worldwide now with capacities ranging from 16 gigabytes (GB)2 to 64GB.

“The new SanDisk Extreme Pro CompactFlash line is the direct result of SanDisk’s passion, commitment, and break-through engineering innovation to provide best-in-class flash memory cards for professional photography,” said Eric Bone, vice president, retail product marketing, SanDisk. “The SanDisk Power Core Controller delivers unmatched write speed and reliability, providing photographers with a spectacular combination of performance, capacity and peace of mind that images are safely stored.”

SanDisk develops its flash controllers and memory chips together, allowing the company to perfectly match and fine-tune the two technologies throughout the testing process, resulting in high-performance products with industry-leading endurance. The SanDisk Power Core Controller brings numerous benefits to the SanDisk Extreme Pro CompactFlash cards, including:

· High-Performance: The SanDisk® Power Core™ Controller’s dual-lane architecture and software algorithms double card performance, enabling the SanDisk Extreme Pro CompactFlash cards’ read/write speeds of up to 90MB/s over a UDMA-6 bus.

· Increased-Reliability: The SanDisk Power Core Controller’s firmware algorithms and 42-bit ECC engine maintain data integrity and extended card endurance through optimised wear leveling.

· Simplified Design: To further increase overall card durability, the SanDisk Power Core Controller features an integrated design that requires fewer individual components on the card’s printed circuit board.

Pr Professional-Grade Memory:
Faster read and write speeds mean more opportunities to capture the winning shot and less time spent offloading gigabytes of images afterwards. Large storage capacity enables photographers to capture RAW images and high-definition video clips in a single session without running out of space.

“Professional-grade memory cards play an important role in producing optimal results from Nikon’s high performance Digital SLR cameras,” said Mr. Sasagaki, general manager, marketing department, Nikon Corporation. “The SanDisk Extreme Pro CompactFlash card’s 90MB/s read and write speeds will boost overall DSLR performance and help photographers get the most out of our cameras.”

The SanDisk Extreme Pro CompactFlash cards’ 16 to 64GB capacity range offers the storage space needed to allow extended shooting sessions without having to reload, while the cards’ 90MB/s read/write speeds ensure that professionals can transfer their data quickly. This unique combination of speed and capacity makes the new line of cards well suited for professional usage models involving large amounts of data and tight deadlines.

“As a professional sports photographer, I rely on aspeedy camera and high-performance SanDisk Extreme Pro cards to capture as many images as possible within a few seconds using continuous burst mode,” says Jeff Lewis, professional photographer and member of the SanDisk Extreme Team. “How fast you can download and edit images from the cards makes a big difference when it comes to getting sports images distributed. The first images out of the media room tend to be the ones that get picked up. Speed really counts for getting selected by the top photo editors.”

Renowned for their world-class durability, SanDisk Extreme cards guarantee operation at extended temperatures ranging from minus 13 F (minus 25 C) to 185 F (85 C). SanDisk Extreme Pro CompactFlash cards feature RTV Silicone coating for added protection against moisture and humidity. The cards can withstand accidental drops of up to nine feet, and carry a lifetime limited warranty.3

SanDisk Extreme Pro CompactFlash cards are fully compatible with any camera, card reader or other device that supports CompactFlash cards.4 The SanDisk Extreme Pro ExpressCard™ Adapter is optimised to take advantage of the SanDisk Extreme Pro CompactFlash card’s up to 90MB/s read speed. The reader carries an MSRP of $49.99 and will be available in late October on SanDisk.com and at select retailers.

Pricing and Availability
SanDisk is also introducing new SanDisk Extreme CompactFlash cards at increased performance of previous SanDisk Extreme III CompactFlash cards. The new SanDisk Extreme and SanDisk Extreme Pro cards represent the step beyond SanDisk Extreme III and SanDisk Extreme IV cards, respectively.

SanDisk Extreme CompactFlash cards will be available in capacities of 8GB to 32GB and MSRP ranging from £61 to £190, while SanDisk Extreme Pro CompactFlash cards will be available in capacities of 16GB to 64GB and MSRP ranging from £197 to £657. Exact pricing for the cards will be set by retailers.

CompactFlash Card Line
Performance1
Available Capacity2
SanDisk Extreme
60MB/s read/write speed (400x)
8GB, 16GB, 32GB
SanDisk Extreme Pro
90MB/s read/write speed (600x)
16GB, 32GB, 64GB

About SanDisk
SanDisk Corporation is the global leader in flash memory cards, from research, manufacturing and product design to consumer branding and retail distribution. SanDisk’s product portfolio includes flash memory cards for mobile phones, digital cameras and camcorders; digital audio/video players; USB flash drives for consumers and the enterprise; embedded memory for mobile devices; and solid state drives for computers. SanDiskis a Silicon Valley-based S&P 500 company, with more than half its sales outside the United States.
______________________________________________________________________
1Up to 90MB/s read/write. Based on SanDisk internal testing; performance may vary depending upon host device. 1 megabyte (MB) = 1 million bytes. X=150KB/sec.
2 1 gigabyte (GB) = 1 billion bytes. Some capacity not available for data storage.
3 Warranty may vary by country.
4 Actual read and write speeds of the SanDisk Extreme Pro CompactFlash cards are dependent on host device.

The memory also have their XMP profiles set at 1600MHz, with CAS latency settings of 8-8-8-24. According to Corsair, systems using the RAM kits and running Windows 7 demonstrated “substantial performance gains in system startup, shutdown, context switching, and game loading”‘ you can find their full results here [pdf link].

The dual channel configuration (CMD8GX3M4A1600C8) comes with four matched 2GB modules, and is optimized for P55 motherboards, while the triple channel configuration (CMD12GX3M6A1600C8) consists of six matched 2GB modules, optimized for X58 motherboards. Each also includes a color-matched Airflow fan.  No word on pricing, but we can’t imagine these will be cheap ways to add memory.

First and foremost, the Magellan RoadMate 1700 is seven-inches of widescreen pleasure. It’s finger friendly to say the least, and it boasts a pretty clear image for you to stare at, and poke mercilessly. It’s gone up on a few retailer’s websites, boasting the standard RoadMate features, which are not limited to: entire maps of the United States, Puerto Rico, and Canada; on board AAA TourBook lists; text-to-speech; a MicroSD card slot for memory expansion; and six million points of interest.

Of course, as these things go, there isn’t any word on a release date at this point. Going by what some retailers are saying, such as Best Buy, they’ve got a target window between September 14th and 21st. They’ve got the price at $299.99, like the Magellan Maestro 4700 from a few months back. If the release date pans out like we think it will, then September just got a bit heavier with its tech releases, and we’re beginning to wonder if our pocketbooks are going to be able to keep up.

[via Engadget]

As we’ve mentioned before, Nokia World is coming up next week, and this is where it’s pretty much official that the N900 will be shown off in plenty, and then hopefully garnished with a release date and other details pertaining to how people can get their hands on it. What we do know is that the screen is roughly 3.5-inches, it comes with GPS, an accelerometer, a 5-megapixel camera, and 32GB of on board memory.

There’s only so much to go over here, but that won’t be the case for much longer. Nokia World is just around the corner, and with it comes the Rover, which will hopefully show off a lot of different things. Things that consumers like, and will want to buy.

[via BeGeek]

Mass production of the chip is expected to begin in Q4 2009, allowing OEMs to produce smaller devices at more cost-effective prices.  Micron and Intel will announce their 2xnm technology later on in the year, even smaller memory that will enable more compact and efficient devices.

Press Release:

INTEL, MICRON ACHIEVE INDUSTRY’S MOST EFFICIENT NAND PRODUCT USING 3-BIT-PER-CELL TECHNOLOGY

Companies Hit Manufacturing Milestone Taking Advantage of 34-Nanometer NAND Process, To Deliver 32-Gigabit Density

SANTA CLARA, Calif. and BOISE, Idaho, Aug. 11, 2009 – Intel Corporation and Micron Technology Inc. today announced the development of a new 3-bit-per-cell (3bpc) multi-level cell (MLC) NAND technology, leveraging their award-winning 34-nanometer (nm) NAND process. The chips are typically used in consumer storage devices such as flash cards and USB drives, where high density and cost-efficiency are paramount.

Designed and manufactured by IM Flash Technologies (IMFT), their NAND flash joint venture, the new 3bpc NAND technology produces the industry’s smallest and most cost-effective 32-gigabit (Gb) chip that is currently available on the market. The 32Gb 3bpc NAND chip is 126mm². Micron is currently sampling and will be in mass production in the fourth quarter 2009. With the companies’ continuing to focus on the next process shrink, 3bpc NAND technology is an important piece of their product strategy and is an effective approach in serving key market segments.

“We see 3bpc NAND technology as an important piece of our roadmap,” said Brian Shirley, vice president of Micron’s memory group. “We also continue to move forward on further shrinks in NAND that will provide our customers with a world-leading portfolio of products for many years to come. Today’s announcement further highlights that Micron and Intel have made great strides in 34-nanometer NAND, and we look forward to introducing our 2xnm technology later this year.”

“The move to 3bpc is yet another proof point to the remarkable progress Intel and Micron have made in 34-nm NAND development,” said Randy Wilhelm, Intel vice president and general manager, Intel NAND Solutions Group. “This milestone sets the stage for continued silicon leadership on 2xnm process that will help decrease costs and increase the capabilities of our NAND solutions for our customers.”

Apparently, you can hold up to 2TB of information on this thing and will be capable of transferring at speeds of 480Mbps or about 60MB/s using USB 2.0. This makes for some serious speed and flexibility.

These new memory sticks will use the same slot technology and will likely support older generation cards. It’s unclear what devices the Memory Stick XC will appear in first, but the cameras are the first likely target.

The new card will also be accompanied by two new SDHC memory cards, offering 16GB and 32GB capacity, boasting the same transfer speeds and reaching the market at the same time.  No word on pricing as yet. 

Press Release:

Toshiba to Launch World’s First 64GB SDXC Card

TOKYO and IRVINE, Calif., Aug. 3 /PRNewswire/ — Toshiba Corporation, a leading innovator in NAND flash memory technologies and solutions, and Toshiba America Electronic Components, Inc. (TAEC), a North American subsidiary, today announced the launch of the world’s first 64GB(1) SDXC Memory Card(2) capable of operating at the world’s fastest data transfer rate(3) for reading and writing to a flash memory card. The new card is compliant with the new SD Memory Standard, Ver. 3.00, UHS104. Toshiba also extended its industry leadership in memory card solutions by unveiling 32GB and 16GB SDHC Memory Cards compliant with the world’s fastest data transfer rate. Samples of the new SDXC Memory Cards will be available this November, and samples of the new SDHC Memory Cards will be available in December.

The new SDXC and SDHC Memory Cards are the world’s first memory cards compliant with the SD Memory Card Standard Version 3.00, UHS104, which brings a new level of ultra-fast read and write speeds to NAND flash based memory cards: a maximum write speed of 35MB(4) per second, and a read speed of 60MB per second. The combination of large storage capacities and increased data transfer rates will meet the needs of a wide range of consumer electronics applications such as digital still cameras and digital camcorders that require high bandwidth data communication. For example, digital SLR cameras will be able to shoot longer continuous bursts in the highest quality RAW format. Similarly, with these cards, it will be possible to download a 2.4GB video in only 70 seconds.

The SDXC card is the next-generation standard defined by the SD Association in January 2009. The new standard applies to cards with capacities over 32GB and up to 2TB, compared to the SDHC standard, which applies to cards with capacities over 2GB and up to 32GB.

The high level specifications and wide range of memory cards announced by Toshiba will further open the way for developers to bring applications to future generations of consumer products. By further enhancing its SD Memory Card lineups with larger capacity and a higher data transfer rate, Toshiba will continue to meet market demand and to lead the NAND flash memory market.

Key Features

(1) SDXC Memory Card realizes the 64GB capacity, the largest capacity yet available in the market.

(2) Supports UHS104, a new ultra high speed interface in the new SD Memory Card Standard Ver. 3.00, which provides 104MB per second bus speed on the SD interface, and realizes maximum write speed of 35MB per sec., with a read speed of 60MB per sec.

(3) UHS104 provides the conventional SD interfaces: 3.3V DS (25MHz)/ HS (50MHz) and new SDHC Memory Cards with UHS104 are interoperable with existing SDHC host devices.

(4) Integrates highly secure CPRM copy protection technology.

The workstation ECC-DIMM modules have been tested with Nehalem and Intel Tylersburg chips, passing the industry-benchmarking tests for reliability and compatibility.  In addition, A-DATA claim there are power consumption and heat dissipation benefits to using a single, large stick rather than multiple smaller-capacity DDR3 chips.

We’re waiting to hear back from A-DATA regarding pricing and availability of the new memory.

Update: The 4GB A-DATA memory will have a US MRSP of $99.99.

Press Release:

A-DATA Technology Extends Its Entire DDR3 Lineup with 4GB Single Module

Taipei, Taiwan – July 28, 2009 – A-DATA Technology Co., Ltd., the worldwide leader in DRAM modules and Flash application products, leads the industry by announcing today the availability of high-capacity 4GB single module for its entire DDR3 offering, which includes U-DIMM for desktops, SO-DIMM for laptops, and unbuffered ECC-DIMM/ECC Registered DIMM for workstations and servers.

Memories have been quickly evolving to the next generation DDR3 as memory requirement for both hardware and software has grown significantly to cope with the increasingly sophisticated applications and the latest platforms. To address the needs for a more powerful memory support, A-DATA makes high-density memory upgrade available and much easier by offering high-capacity 4GB DDR3 in single module.

In addition to the memories for desktops and laptops, to complete this high-capacity solution, unbuffered ECC-DIMM and ECC Registered DIMM were also introduced, each passed the industry-benchmarking tests on compatibility and reliability with Intel Tylersburg platform and Nehalem processor. Available in all speed standards for all types of systems, the 4GB DDR3 single module from A-DATA brings not only capacity, but also lower energy consumption and better heat dissipation, making it an ideal memory expansion solution for PC enthusiasts or professionals who demand top-notch computing power and system stability.

All of A-DATA memory modules pass rigorous cross-platform and durability testing to ensure quality, compatibility and satisfying performance to customers. Now get free download Norton Internet Security™ (60-day Trial) with any purchase of A-DATA DRAM modules, allowing users to upgrade both performance and security at the same time. A-DATA memory modules also come with a lifetime warranty.

About A-DATA
A-DATA Technology, the world’s 2nd largest vendor of DRAM Modules (iSuppli, May 2009), 4th largest of USB Flash Drives (Gartner, May 2009), and the Top 20 global brand in Taiwan, provides complete memory solutions, including DRAM Modules, USB Flash Drives, Memory Cards, Solid State Drives and Portable Hard Drives. Committed to constant innovation, A-DATA delivers first-rate quality and industry-leading product performance to worldwide customers. Widely known for its distinctive design, A-DATA products are internationally recognized by Germany’s iF Design Award, Reddot Award, CES Best of Innovations Award, Japan’s Good Design Award, Best Choice of Computex Award, and Taiwan Excellence Gold Award. For more information, please visit our website at www.adata-group.com

All of the chips are black with red fins, and ship with the Corsair Airflow fan as standard.  They’re manufactured using the company’s DHX+ (Dual-path Heat eXchange) heatsink for both front and rear cooling, and have removable heatsink fins for using the memory with waterblocks and other cooling devices. 

The four kits are as follows:

• 6GB for Intel Core i7 (CMG6GX3M3A2000C7): Matched set of three 2GB modules, DDR3, 2000MHz, 7-7-7-20 latency timings
• 4GB for AMD Phenom II AM3 (CMG4GX3M2A1600C6):  Matched pair of 2GB modules, DDR3, 1600MHz, 6-6-6-18 latency timings
• 6GB for Intel Core i7 (CMG6GX3M3A2000C8):  Matched set of three 2GB modules, DDR3, 2000MHz, 8-8-8-24 latency timings
• 6GB for Intel Core i7 (CMG6GX3M3A1866C7):  Matched set of three 2GB modules, DDR3, 1866MHz, 7-7-7-20 latency timings

All will be available within one to two weeks, directly from Corsair or though resellers. 

Press Release:

Corsair® Re-launches Dominator GT Ultra-Performance DRAM Modules

- Implements changes in materials and qualification to bring Hyper-based overclocking modules back to market -

Fremont, CA. July 22, 2009 — Corsair®, a worldwide leader in high-performance computer memory, power supplies, and flash memory products including solid-state drives, today re-introduced the popular Dominator GT line of memory modules. These modules had been removed from the market due to unacceptable failure levels of the Elpida “Hyper” components with which the modules are constructed.

“The issue with the Hyper RAMs was discovered with the help of the enthusiast community, and we worked closely with them to solve it,” stated John Beekley, VP of Applications Engineering at Corsair. “Our lab was able to correlate the failures to specific batches of early material, we worked very closely with Elpida to determine the root cause of the issue and to define the associated corrective actions to take. We are confident that every GT module using the Elpida Hyper IC Corsair ships from today will meet our strict quality and reliability standard.”

The Dominator GT memory kits are being re-introduced with updated part numbers, and will be available within one to two weeks. All Dominator GT modules are black with red fins, and include the Airflow cooling fan. Module kits and specifications are as follows:
· 6GB kit for Intel Core i7: Part number CMG6GX3M3A2000C7, available directly from Corsair’s web store at corsair.com. Matched set of three 2GB modules, DDR3, 2000MHz, 7-7-7-20 latency timings.
· 4GB kit for AMD Phenom II AM3: Part number CMG4GX3M2A1600C6, available directly from Corsair’s web store at corsair.com. Matched pair of 2GB modules, DDR3, 1600MHz, 6-6-6-18 latency timings.
· 6GB kit for Intel Core i7: Part number CMG6GX3M3A2000C8, available from authorized Corsair resellers and Corsair’s web store at corsair.com. Matched set of three 2GB modules, DDR3, 2000MHz, 8-8-8-24 latency timings.
· 6GB kit for Intel Core i7: Part number CMG6GX3M3A1866C7, available from authorized Corsair resellers and Corsair’s web store at corsair.com. Matched set of three 2GB modules, DDR3, 1866MHz, 7-7-7-20 latency timings.

All Corsair Dominator GT modules are built using the patent-pending DHX+ (Dual-path Heat eXchange) heatsink, which uniquely cools both the front and back of the memory ICs, and the printed circuit board, for greater reliability and increased overclocking flexibility. DHX+ modules also utilize removable heatsink fins, which allows for range of Dominator GT cooling options, including the Corsair Cooling™ Hydro Series H30 waterblock and Ice Series T30 thermo-electric cooler, which actively cools the modules up to 20°C below ambient temperature for maximum overclockability.
All Dominator GT products also ship with the Corsair Airflow fan as standard, which maximizes airflow over the module’s cooling fins, increasing heat dissipation to improve memory performance and reliability.
The new Dominator GT modules will be available within one to two weeks from Corsair’s authorized distributors, resellers worldwide and Corsair’s web store at corsair.com, These modules are backed by Corsair’s limited lifetime warranty. Complete customer support via telephone, email, forum and Tech Support Express is also available.

More information about the Corsair Dominator GT family can be found here: http://www.corsair.com/products/dominatorgt
About Corsair®
Founded in 1994, Corsair Memory, Inc., is a worldwide leader in high-performance components for personal computers. Specializing in very high performance memory and ultra-efficient power supplies, our flagship products, Including Dominator™ memory modules, are the choice of overclockers, enthusiasts, and gamers everywhere. Our expertise in design and manufacturing is also evident in our complete line of Flash Voyager® and Flash Survivor™ USB storage devices. Corsair offers 24/7 customer support via forums and the Tech Support Express helpdesk. For more information, please visit www.corsair.com
Copyright© 2009 Corsair. All rights reserved. All company and/or product names may be trade names, trademarks, and/or registered trademarks of the respective owners with which they are associated. Features, pricing, availability, and specifications are subject to change without notice.

The great thing about this process is that it allows the company to mass produce very dense chips without upping their power consumption. This keeps costs down as well. The idea here is to offer up 4GB RAM for notebooks and 16GB RAM for servers.

These new chips contain twice as much bandwidth as the old 1 gigabit chips. We don’t know at this time how much the RAM will cost or when it will be made available, but you can count on these chips being available pre-installed in computer offerings first.