SanDisk teams up Toshiba to launch 43nm NAND flash and X3 technology

Feb 7, 2008

SanDisk and Toshiba made two announcements yesterday that promised to deliver cheaper and bigger MLC (multi-level cell) NAND flash media. First is their x3, aka three-bit-per cell technology, would allow the company to cram 20 percents more die per wafer than traditional 56nm MLC flash which uses two-bits-per-cell technology. Second is the use of 43 nanometer process technology that doubles the density per chip compared to the previous 56nm process.

SanDisk-Toshiba co-designed 43nm production process is ready to begin its mass-production and shipment will start in the second half of 2008 with 16GB and 32GB models. You can expect a more competitive flash based storage soon.

[via webwire]

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